absolute maximum ratings symbol parameter value units v dss drain to source voltage 500 v i d continuous drain current(@t c = 25 c) 4.5 a continuous drain current(@t c = 100 c) 2.9 a i dm drain current pulsed (note 1) 18 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 390 mj e ar repetitive avalanche energy (note 1) 7.4 mj dv/dt peak diode recovery dv/dt (note 3) 3.5 v/ns p d total power dissipation(@t c = 25 c) 74 w derating factor above 25 c 0.59 w/c t stg, t j operating junction temperature & storage temperature - 55 ~ 150 c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 c thermal characteristics symbol parameter value units min. typ. max. r jc thermal resistance, junction-to-case - - 1.7 c/w r cs thermal resistance, case to sink - 0.5 - c/w r ja thermal resistance, junction-to-ambient - - 62 c/w oct, 2004. rev. 0. 1/7 copyright@ d&i semiconductor co., ltd., korea. all rights reserved. DFP830 features r ds(on) (max 1.5 ? )@v gs =10v gate charge (typical 32nc) improved dv/dt capability high ruggedness 100% avalanche tested general description this n-channel enhancement mode field-effect power transistor using di semiconductor?s advanced planar stripe, dmos technol- ogy intended for off-line switch mode power supply. also, especially designed to minimize rds(on) and high rugged avalanche characteristics. the to-220 pkg is well suited for half bridge and full bridge resonant topolgy like a electronic ballast . n-channel mosfet to-220 1 2 3 r ds(on) = 1.5 ohm i d = 4.5a bv dss = 500v 1.gate 2.drain 3.source
electrical char acteristics ( t c = 25 c unless otherwise noted ) symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250ua 500 - - v bv dss / t j breakdown voltage temperature coefficient i d = 250ua, referenced to 25 c - 0.6 - v/c i dss drain-source leakage current v ds = 500v, v gs = 0v --1ua v ds = 400v, t c = 125 c --10ua i gss gate-source leakage, forward v gs = 30v, v ds = 0v --100na gate-source leakage, reverse v gs = -30v, v ds = 0v - - -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250ua 2.0 - 4.0 v r ds(on) static drain-source on-state resis- tance v gs =10 v, i d = 2.7a -1.21.5 ? dynamic characteristics c iss input capacitance v gs =0 v, v ds =25v, f = 1mhz - 580 - pf c oss output capacitance - 152 - c rss reverse transfer capacitance - 23 - dynamic characteristics t d(on) turn-on delay time v dd =250v, i d =4.5a, r g =25 ? ? see fig. 13. (note 4, 5) - 28 36 ns t r rise time - 60 78 t d(off) turn-off delay time - 134 175 t f fall time - 38 50 q g total gate charge v ds =400v, v gs =10v, i d =4.5a ? see fig. 12. (note 4, 5) - 30 36 nc q gs gate-source charge - 4- q gd gate-drain charge(miller charge) - 12 - source-drain diode rati ngs and characteristics symbol parameter test cond itions min. typ. max. unit. i s continuous source current integral reverse p-n junction diode in the mosfet --4.5 a i sm pulsed source current - - 18 v sd diode forward voltage i s =4.5a, v gs =0v - - 1.5 v t rr reverse recovery time i s =4.5a, v gs =0v, di f /dt=100a/us - 416 - ns q rr reverse recovery charge - 1.58 - uc DFP830 ? notes 1. repeativity rating : pulse width limited by junction temperature 2. l = 34.7mh, i as =4.5a, v dd = 50v, r g = 50 ? , starting t j = 25c 3. i sd ? 4 .5a, di/dt ? 300a/us, v dd ? bv dss , starting t j = 25c 4. pulse test : pulse width ? 300us, duty cycle ? 2% 5. essentially independent of operating temperature. 2/7
0 5 10 15 20 25 30 35 0 2 4 6 8 10 12 v ds = 100v v gs , gate-source voltage [v] v ds = 250v v ds = 400v note : i ? d = 4.5 a q g , total gate charge [nc] 0 5 10 15 20 25 30 35 40 0 250 500 750 1000 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes : ? 1. v gs = 0v 2. f=1mhz c iss c oss c rss capacitance [pf] v ds , drain-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 10 1 150 ? notes : ? 1. v gs = 0v 2. 250 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 02468101214 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 20v v gs = 10v note : t ? j = 25 ? r ds(on) , drain-source on-resistance [ ? ] i d , drain current [a] 2345678910 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : ? 1. v ds = 30v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 0 10 1 10 -1 10 0 10 1 notes : ? 1. 250 s pulse test 2. t c = 25 ? v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v i d , drain current [a] v ds , drain-source voltage [v] fig 3. on resistance variation vs. drain current and gate voltage fig 4. on state current vs. allowable case temperature fig 5. capacitance characteristics fig 6. gate charge characteristics DFP830 fig 1. on-state characteristics fig 2. transfer characteristics 3/7
-100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : ? 1. v gs = 10 v 2. i d = 2.7 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : ? 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 25 50 75 100 125 150 0 1 2 3 4 t c' case temperature [ o c] i d' drain current [a] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : ? 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n otes : ? 1. z jc (t) = 1.7 /w m ax. ? 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] fig 9. maximum safe operating area fig 10. maximum drain current fig 11. transient thermal response curve fig 7. breakdown voltage variation vs. junction temperature fig 8. on-resistance variation vs. junction temperature DFP830 4/7
fig 13. switching time test circuit & waveforms fig 14. unclamped inductive swit ching test circuit & waveforms DFP830 fig. 12. gate charge test circuit & waveforms 5/7 12v 200nf 50ko 300nf v gs 1ma same type as dut dut v ds v gs charge q g q gs q gd pulse generator 10v r g v ds r l v dd (0.5 rated v ds ) dut v ds v in 90% 10% t d(on) t r t d(off) t f t on t off time 10v v ds r g v ds (t) dut bv dss l i d v dd i d (t) i as e as =l l i as 2 bv dss bv dss - v dd 1 2 t p
DFP830 dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v d d l l i s i s fig. 15. peak diode recovery dv/dt test circuit & waveforms 10 v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward volta g e dro p v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- 10 v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward volta g e dro p v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- 6/7
DFP830 7/7 to-220 package dimension m l o n k j i h k j i h a c g f d e b a c g f d e b ? 4.70 3.30 15.92 1.40 2.90 13.28 9.40 6.52 max 4.50 3.00 15.52 1.30 2.80 13.08 9.20 6.32 typ. 4.30 2.70 15.12 1.20 2.70 12.88 9.00 6.12 min mm h g f e d c b a dimension 4.70 3.30 15.92 1.40 2.90 13.28 9.40 6.52 max 4.50 3.00 15.52 1.30 2.80 13.08 9.20 6.32 typ. 4.30 2.70 15.12 1.20 2.70 12.88 9.00 6.12 min mm h g f e d c b a dimension 5.28 2.64 1.62 2.50 0.60 1.40 max 3.60 5.08 2.54 1.52 9.90 2.40 0.50 1.30 typ. 4.88 2.44 1.42 2.30 0.45 1.25 min mm ? o n m l k j i dimension 5.28 2.64 1.62 2.50 0.60 1.40 max 3.60 5.08 2.54 1.52 9.90 2.40 0.50 1.30 typ. 4.88 2.44 1.42 2.30 0.45 1.25 min mm ? o n m l k j i dimension
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